Chemically doped recrystallized Silicon Carbide (RSiC doped)

•Compact SiC matrix with open porousity.

•Very good oxidation resistance.

•Multiple increased life time compared to
Halsic-R.

•Ideal material for porcelain fast firing.

•Large sized components possible.

•Reliable bonding of coatings.

•Application temperatures: up to 1650°C (oxidizing)